QPD1025LS2 datasheet(10/18 Pages) TRIQUINT

10 / 18 page

QPD1025L

1500 W, 65 V, 1.0

– 1.1 GHz, GaN RF Input-Matched Transistor

Datasheet Rev. B

│ Subject to change without notice

- 10 of 18 -

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Thermal and Reliability Information

– Pulsed 1, 2, 3

Parameter

Conditions

Values

Units

Thermal Resistance, FEA (θJC) (1) (3)

85 °C Case

Pdiss = 518 W

Pulse: 100 us PW, 10% DC

0.12

°C/W

Peak Channel Temperature, FEA (TCH) (1)

151

°C

Median Lifetime, FEA (TM) (1)

5.0E10

Hrs

Peak Channel Temperature, IR (2)

130 (2)

°C

Thermal Resistance, FEA (θJC) (1) (3)

85 °C Case

Pdiss = 691 W

Pulse: 100 us PW, 10% DC

0.13

°C/W

Peak Channel Temperature, FEA (TCH) (1)

177

°C

Median Lifetime, FEA (TM) (1)

3.0E9

Hrs

Peak Channel Temperature, IR (2)

147 (2)

°C

Thermal Resistance, FEA (θJC) (1) (3)

85 °C Case

Pdiss = 864 W

Pulse: 100 us PW, 10% DC

0.14

°C/W

Peak Channel Temperature, FEA (TCH) (1)

209

°C

Median Lifetime, FEA (TM) (1)

1.7E8

Hrs

Peak Channel Temperature, IR (2)

166 (2)

°C

Thermal Resistance, FEA (θJC) (1) (3)

85 °C Case

Pdiss = 1037 W

Pulse: 100 us PW, 10% DC

0.15

°C/W

Peak Channel Temperature, FEA (TCH) (1)

239

°C

Median Lifetime, FEA (TM) (1)

1.8E7

Hrs

Peak Channel Temperature, IR (2)

183 (2)

°C

Notes:

1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability.

Unless otherwise noted, all thermal references are FEA.

2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability.

3. Thermal resistance measured to backside of package.

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