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LF355 Fiches technique(PDF) 15 Page - National Semiconductor (TI) |
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LF355 Fiches technique(HTML) 15 Page - National Semiconductor (TI) |
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15 / 23 page ![]() Typical Applications (Continued) Wide BW Low Noise, Low Drift Amplifier 00564670 • Parasitic input capacitance C1 . (3pF for LF155, LF156 and LF357 plus any additional layout capacitance) interacts with feedback elements and creates undesirable high frequency pole. To compensate add C2 such that: R2 C2 . R1 C1. Boosting the LF156 with a Current Amplifier 00564673 • I OUT(MAX).150mA (will drive RL≥ 100Ω) • No additional phase shift added by the current amplifier www.national.com 15 |
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