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REF3425 Fiches technique(PDF) 4 Page - Texas Instruments |
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REF3425 Fiches technique(HTML) 4 Page - Texas Instruments |
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4 / 25 page ![]() 4 REF3425 SBAS804 – SEPTEMBER 2017 www.ti.com Product Folder Links: REF3425 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Input voltage IN VREF + 0.05 13 V EN –0.3 IN + 0.3 Output voltage VREF –0.3 5.5 V Output short circuit current 20 mA Temperature Operating, TA –55 150 °C Storage Tstg –65 170 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250 (1) Drop out voltage. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT IN Supply input voltage (IL = 0 mA, TA = 25°C) VREF + VDO (1) 12 V EN Enable voltage 0 IN V IL Output current –10 10 mA TA Operating temperature –40 25 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) REF3425 UNIT DBV (SOT-23) 6 PINS RθJA Junction-to-ambient thermal resistance 185 °C/W RθJC(top) Junction-to-case (top) thermal resistance 156 °C/W RθJB Junction-to-board thermal resistance 29.6 °C/W ψJT Junction-to-top characterization parameter 33.8 °C/W ψJB Junction-to-board characterization parameter 29.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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