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2SB1283 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1283 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Darlingtion Power Transistor 2SB1283 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -5mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -5mA -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -100 μ A ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ -100 μ A IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -5.0 mA hFE DC Current Gain IC= -3A; VCE= -3V 1500 15000 fT Current-Gain—Bandwidth Product IC= -0.7A; VCE= -10V 20 MHz Switching Times ton Turn-on Time IC= -3.0A ,IB1= -IB2= -5mA, VCC≈ -40V; RL= 10Ω 1.0 μ s tstg Storage Time 4.0 μ s tf Fall Time 2.0 μ s |
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