BLF548 datasheet(3/15 Pages) PHILIPS

3 / 15 page

2003 Sep 26

Philips Semiconductors

Product speciﬁcation

UHF push-pull power MOS transistor

BLF548

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor section unless otherwise speciﬁed

VDS

drain-source voltage

−

VGS

gate-source voltage

−±20

drain current (DC)

−

Ptot

total power dissipation

Tmb ≤ 25 °C; total device; both sections

equally loaded

−

330

Tstg

storage temperature

−65

+150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-mb

thermal resistance from junction to

mounting base

Tmb =25 °C; Ptot = 330 W; total device;

both sections equally loaded

0.5

K/W

Rth mb-h

thermal resistance from mounting

base to heatsink

total device; both sections equally

loaded

0.15

K/W

Fig.2 DC SOAR.

(1) Current in this area may be limited by RDSon.

(2) Tmb =25 °C.

Total device; both sections equally loaded.

handbook, halfpage

110

MRA997

102

(1)

(A)

VDS (V)

(2)

Fig.3 Power derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Total device; both sections equally loaded.

handbook, halfpage

100

150

200

250

300

350

400

100

120

(2)

(1)

MRA532

Ptot

(W)

Th (

oC)

BLF548 Fiches technique(PDF) 3 Page - NXP Semiconductors

BLF548 Fiches technique(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Fiches technique Télécharger

Lien URL