6-371

MSA-0635, -0636 Absolute Maximum Ratings

Parameter

Device Current

50 mA

200 mW

RF Input Power

+13dBm

Junction Temperature

200

°C

–65 to 200

°C

θ

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

3. Derate at 6.5 mW/

°C for T

4. Storage above +150

°C may tarnish the leads of this package making it

difficult to solder into a circuit.

5. The small spot size of this technique results in a higher, though more

accurate determination of

θ

MENTS section “Thermal Resistance” for more information.

f = 0.1 GHz

dB

19.0

20.5

22.0

Gain Flatness

f = 0.1 to 2.5 GHz

dB

± 0.7

± 1.0

3 dB Bandwidth

GHz

0.9

Input VSWR

f = 0.1 to 1.5 GHz

1.4:1

Output VSWR

f = 0.1 to 1.5 GHz

1.3:1

NF

50

Ω Noise Figure

f = 0.5 GHz

dB

2.8

4.0

Output Power at 1 dB Gain Compression

f = 0.5 GHz

dBm

2.0

Third Order Intercept Point

f = 0.5 GHz

dBm

14.5

Group Delay

f = 0.5 GHz

psec

200

Device Voltage

V

3.1

3.5

3.9

dV/dT

Device Voltage Temperature Coefficient

mV/

°C

–8.0

Note:

1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current

is on the following page.

Symbol

Parameters and Test Conditions: I

Units

Min.

Typ.

Max.

VSWR