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2SC2717M Fiches technique(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

No de pièce 2SC2717M
Description  Silicon NPN transistor in a SOT-23 Plastic Package
PDF  6 Pages
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Fabricant  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Site Internet  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SC2717M Fiches technique(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SC2717M
Rev.F Apr.-2017
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
4.0
V
Collector Current
IC
50
mA
Emitter Current
IE
-50
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector-Emitter Breakdown
Voltage
VCEO
IC=10mA
IB=0
25
V
Collector Cut-Off Current
ICBO
VCB=30V
IE=0
0.1
μA
Emitter Base Cut-Off Current
IEBO
VEB=3.0V
IC=0
0.1
μA
DC Current Gain
hFE
VCE=12.5V
Ic=12.5mA
40
240
Collector to Emitter Saturation
Voltage
VCE(sat)
IC=15mA
IB=1.5mA
0.2
V
Base to Emitter Saturation Voltage VBE(sat)
IC=15mA
IB=1.5mA
1.5
V
Transition Frequency
fT
VCE=12.5V
IC=12.5mA
300
550
MHz
Collector Output Capacitance
Cob
VCB=10V
IE=0
f=30MHz
0.8
2.0
pF
Conversion Gain
Gpe
VCC=12.5V
f=45MHz
IE=-12.5mA
28
36
dB
Collector to Base Time Constant
Cc.rbb’
VCB=10V
IE=-1.0Ma
f=30MHz
25
ps
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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