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IXFR55N50F Fiches technique(PDF) 1 Page - IXYS Corporation |
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IXFR55N50F Fiches technique(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 2004 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C 500 V V DGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C45 A I DM T C = 25°C, pulse width limited by TJM 220 A I AR T C = 25°C55 A E AR T C = 25°C60 mJ E AS T C = 25°C 3.0 J dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 10 V/ns T J ≤ 150°C, RG = 2 Ω P D T C = 25°C 400 W T J -40 ... +150 ° C T JM 150 °C T stg -40 ... +150 ° C T L 1.6 mm (0.063 in.) from case for 10 s 300 ° C V ISOL 50/60 Hz, RMS t = 1 min 2500 V~ Weight 5 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 1mA 500 V V GS(th) V DS = VGS, ID = 8mA 3.0 5.5 V I GSS V GS = ±20 V, VDS = 0 ±200 nA I DSS V DS = VDSS T J = 25 °C 100 µA V GS = 0 V T J = 125°C3 mA R DS(on) V GS = 10 V, ID = IT 90 m Ω Notes 2, 3 DS98814C(06/04) G = Gate D = Drain S = Source TAB = Electrically Isolated HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q g, Low Intrinsic Rg High dV/dt, Low t rr IXFR 55N50F V DSS = 500 V I D25 = 55 A R DS(on) = 90 m Ω Ω Ω Ω Ω t rr ≤ ≤≤≤≤ 250 ns Isolated backside* ISOPLUS 247TM E153432 Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation RF capable Mosfets Low gate charge and capacitances - easier to drive -fasterswitching Low drain to tab capacitance(<30pF) Low R DS (on) HDMOS TM process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) FastintrinsicRectifier Applications DC-DC converters Batterychargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly Space savings High power density |
Numéro de pièce similaire - IXFR55N50F |
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Description similaire - IXFR55N50F |
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