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BD332 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce BD332
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD332 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
BD332
DESCRIPTION
·
High DC Current Gain
·
Complement to type BD331
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
PNP epitaxial base transistors in monolithic Darlington
circuit for audio output stages and general amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
IBM
Base Current-Peak
-0.15
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.08
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
100
℃
/W


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