STTH2002CR datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

STTH2002C

3/7

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

I (A)

δ=tp/T

P = 20W

P = 10W

P = 5W

Fig. 1: Peak current versus duty cycle (per diode).

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

(V)

(A)

T =25°C

T =150°C

Fig. 2-1: Forward voltage drop versus forward

current (typical values, per diode).

Z/R

th(j-c)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

t(s)

Fig. 3-1: Relative variation of thermal impedance

junction to case versus pulse duration (TO-220AB,

2PAK, D2PAK).

100

150

200

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Fig. 4: Junction capacitance versus reverse

voltage applied (typical values, per diode).

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

(A)

(V)

T =25°C

T =150°C

Fig. 2-2: Forward voltage drop versus forward

current (maximum values, per diode).

0.0

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

Single pulse

t(s)

Fig. 3-2: Relative variation of thermal impedance

junction

case

versus

pulse

duration

(TO-220FPAB).

STTH2002CR Fiches technique(PDF) 3 Page - STMicroelectronics

STTH2002CR Fiches technique(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

Fiches technique Télécharger

Lien URL