MGSF3441VT1

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 7. Source–Drain Diode Forward Voltage

Figure 8. On–Resistance versus

Gate–to–Source Voltage

Figure 9. Threshold Voltage

Figure 10. Single Pulse Power

Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient

0.75

0

VSD, SOURCE–TO–DRAIN VOLTAGE (V)

20

10

VGS, GATE–TO–SOURCE VOLTAGE (V)

0

0.12

0.06

0

–50

TJ, TEMPERATURE (°C)

0.4

0.3

0.2

0.1

0

–0.1

TIME (sec)

0.1

0.01

20

16

12

8.0

0

150

1.0

0.25

0.50

1.00

1.25

2.0

4.0

6.0

8.0

0.18

0.24

0.30

–25

0

25

50

1.0

10

4.0

1.50

TJ = 150°C

TJ = 25°C

ID = 3.3 A

–0.2

75

100

125

ID = 250 mA

SQUARE WAVE PULSE DURATION (sec)

0.0001

0.01

0.1

1.0

10

30

0.1

0.01

2.0

1.0

0.001

1. DUTY CYCLE, D = t1/t2

2. PER UNIT BASE =

RthJA = 62.5°C/W

3. TJM – TA = PDMZthJA(t)

4. SURFACE MOUNTED

PDM

t1

t2

NOTES:

SINGLE PULSE

DUTY CYCLE = 0.5

0.02

0.05

0.1

0.2