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MMP80R900PC Fiches technique(PDF) 1 Page - MagnaChip Semiconductor. |
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MMP80R900PC Fiches technique(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 10 page ![]() MMP80R900PC Datasheet Sep. 2016 Revision 1.0 MagnaChip Semiconductor Ltd. 1 Parameter Value Unit VDS @ Tj,max 850 V RDS(on),max 0.9 Ω VTH,typ 3 V ID 6 A Qg,typ 17.6 nC Order Code Marking Temp. Range Package Packing RoHS Status MMP80R900PCTH 80R900PC -55 ~ 150℃ TO-220 Tube Halogen Free MMP80R900PC 800V 0.9Ω N-channel MOSFET Description MMP80R900PC is power MOSFET using Magnachip ’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free Key Parameters Ordering Information Applications PFC Power Supply Stages Switching Applications Adapter D G S G D S Package & Internal Circuit |
Numéro de pièce similaire - MMP80R900PC |
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