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DSL05 Fiches technique(PDF) 3 Page - STMicroelectronics |
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DSL05 Fiches technique(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() DSL05 Characteristics DocID029116 Rev 2 3/10 1.1 Characteristics (curves) Figure 3: Peak pulse power dissipation versus initial junction temperature (maximum values) Figure 4: Leakage current versus junction temperature Figure 5: Junction capacitance versus reverse voltage Figure 6: Junction capacitance versus junction temperature Figure 7: Clamping response to 8/20 µs surge (Ipp = 10 A) 0 10 20 30 40 50 0 25 50 75 100 125 150 175 IPP (A) Tj(°C) 8/20 µs 0.01 0.1 1 10 100 1000 10000 0 25 50 75 100 125 150 Tj(°C) DSL05 -008 SC6 DSL05 -024 SC6 IR(nA) 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 14 16 18 20 22 24 VR(V) Tj = 25 °C Vosc = 1 V VR < V RM I/O to I/O C(pF) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 25 50 75 100 125 150 C(pF) Tj(°C) Vosc = 1 V VR= 2 V I/O to I/O |
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