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OA1NP Fiches technique(PDF) 23 Page - STMicroelectronics |
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OA1NP Fiches technique(HTML) 23 Page - STMicroelectronics |
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23 / 31 page ![]() DocID025993 Rev 2 23/31 OA1NP, OA2NP, OA4NP Application information 31 4.10 ESD structure of OA1NP, OA2NP, OA4NP series The OA1NP, OA2NP and OA4NP are protected against electrostatic discharge (ESD) with dedicated diodes (see Figure 41). These diodes must be considered at application level especially when signals applied on the input pins go beyond the power supply rails (VCC+ or VCC-). Figure 41. ESD structure Current through the diodes must be limited to a maximum of 10 mA as stated in Table 2. A serial resistor or a Schottky diode can be used on the inputs to improve protection but the 10 mA limit of input current must be strictly observed. |
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