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STM32L100RC Fiches technique(PDF) 50 Page - STMicroelectronics |
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STM32L100RC Fiches technique(HTML) 50 Page - STMicroelectronics |
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50 / 104 page ![]() Electrical characteristics STM32L100RC 50/104 DocID024995 Rev 4 Table 17. Current consumption in Run mode, code with data processing running from RAM Symbol Parameter Conditions fHCLK Typ Max(1) Unit IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash switched off fHSE = fHCLK up to 16 MHz, included fHSE = fHCLK/2 above 16 MHz (PLL ON)(2) Range 3, VCORE=1.2 V VOS[1:0] = 11 1 MHz 185 240 µA 2 MHz 345 410 4 MHz 645 880(3) Range 2, VCORE=1.5 V VOS[1:0] = 10 4 MHz 0.755 1.4 mA 8 MHz 1.5 2.1 16 MHz 33.5 Range 1, VCORE=1.8 V VOS[1:0] = 01 8 MHz 1.8 2.8 16 MHz 3.6 4.1 32 MHz 7.15 8.3 HSI clock source (16 MHz) Range 2, VCORE=1.5 V VOS[1:0] = 10 16 MHz 2.95 3.5 Range 1, VCORE=1.8 V VOS[1:0] = 01 32 MHz 7.15 8.4 MSI clock, 65 kHz Range 3, VCORE=1.2 V VOS[1:0] = 11 65 kHz 38.5 85 µA MSI clock, 524 kHz 524 kHz 110 160 MSI clock, 4.2 MHz 4.2 MHz 690 810 1. Guaranteed by characterization results, not tested in production, unless otherwise specified. 2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). 3. Guaranteed by test in production. |
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