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STM32L063R8 Fiches technique(PDF) 61 Page - STMicroelectronics |
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STM32L063R8 Fiches technique(HTML) 61 Page - STMicroelectronics |
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61 / 121 page ![]() DocID025660 Rev 6 61/121 STM32L063x8 Electrical characteristics 107 Table 30. Current consumption in Run mode, code with data processing running from RAM Symbol Parameter Conditions fHCLK Typ Max(1) Unit IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash switched off fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL on)(2) Range 3, VCORE=1.2 V, VOS[1:0]=11 1 MHz 135 170 µA 2 MHz 240 270 4 MHz 450 480 Range 2, VCORE=1.5 ,V, VOS[1:0]=10 4 MHz 0.52 0.6 mA 8 MHz 1 1.2 16 MHz 2 2.3 Range 1, VCORE=1.8 V, VOS[1:0]=01 8 MHz 1.25 1.4 16 MHz 2.45 2.8 32 MHz 5.1 5.4 MSI clock Range 3, VCORE=1.2 V, VOS[1:0]=11 65 kHz 34.5 75 µA 524 kHz 83 120 4.2 MHz 485 540 HSI16 clock source (16 MHz) Range 2, VCORE=1.5 V, VOS[1:0]=10 16 MHz 2.1 2.3 mA Range 1, VCORE=1.8 V, VOS[1:0]=01 32 MHz 5.1 5.6 1. Guaranteed by characterization results at 125 °C, unless otherwise specified. 2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). Table 31. Current consumption in Run mode vs code type, code with data processing running from RAM(1) Symbol Parameter Conditions fHCLK Typ Unit IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash switched off fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL on)(2) Range 3, VCORE=1.2 V, VOS[1:0]=11 Dhrystone 4 MHz 450 µA CoreMark 575 Fibonacci 370 while(1) 340 Range 1, VCORE=1.8 V, VOS[1:0]=01 Dhrystone 32 MHz 5.1 mA CoreMark 6.25 Fibonacci 4.4 while(1) 4.7 1. Guaranteed by characterization results, unless otherwise specified. 2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). |
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