TS110-8 datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

TS110-8

4/10

DocID026589 Rev 1

Figure 5. Relative variation of thermal

impedance junction to ambient versus pulse

duration

Figure 6. Typical thermal resistance junction to

ambient versus copper surface under anode

(epoxy FR4, Cuth = 35 µm)

0.01

0.10

1.00

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

TO-92

SMBflat-3L

Copper surface

area = 5cm²

T( )

p s

K = [Z

]

th(j-a)

Figure 7. Relative variation of gate trigger

current and trigger voltage versus junction

temperature (typical values)

Figure 8. Relative variation of latching and

holding current versus junction temperature

(typical values)

Figure 9. Relative variation of holding current

versus gate-cathode resistance (typical values)

Figure 10. Relative variation of dV/dt immunity

versus junction temperature (typical values)

0.0

0.5

1.0

1.5

2.0

2.5

1.E-01

1.E+00

1.E+01

GK ()

I [

] / I [

= 2

]

RGK

100

120

Tj °C

()

D = 0.67 X

DRM

GK = 220

dV/d

[T ] /

[T = 25°C]

TS110-8 Fiches technique(PDF) 4 Page - STMicroelectronics

TS110-8 Fiches technique(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

Fiches technique Télécharger

Lien URL