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STU7NF25 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STU7NF25 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() This is information on a product in full production. July 2013 DocID025041 Rev 1 1/12 STU7NF25 N-channel 250 V, 0.29 Ω typ., 8 A STripFET™ II Power MOSFET in IPAK package Datasheet - production data Figure 1. Internal schematic diagram Features • 100% avalanche tested • 175 °C junction temperature Applications • Switching applications Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. IPAK 3 2 1 TAB Order code VDSS RDS(on) max. ID STU7NF25 250 V 0.42 Ω 8 A Table 1. Device summary Order code Marking Package Packaging STU7NF25 7NF25 IPAK Tube www.st.com |
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