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STTH60W03C Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STTH60W03C
Description  Low reverse recovery current
PDF  8 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH60W03C Fiches technique(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH60W03C
4/8
Doc ID 023144 Rev 1
Figure 5.
Reverse recovery time versus dIF/dt
(typical values, per diode)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values, per diode)
0
10
20
30
40
50
60
70
80
90
100
0
50
100
150
200
250
300
350
400
450
500
trr(ns)
I= I
V = 200 V
T = 125 °C
F
F(AV)
R
j
dIF/dt(A/µs)
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
400
450
500
QRR(nC)
dIF/dt(A/µs)
I= I
V = 200 V
T = 125 °C
F
F(AV)
R
j
Figure 7.
Relative variations of dynamic
parameters versus junction
temperature
Figure 8.
Reverse recovery softness factor
versus dIF/dt (typical values, per
diode)
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
Tj (°C)
IF = I
F(AV)
VR = 200 V
Reference: Tj=125 °C
IRM
SFACTOR
QRR
S factor
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
50
100
150
200
250
300
350
400
450
500
I= I
V = 200 V
T = 125 °C
FF(AV)
R
j
dIF/dt(A/µs)



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