STPSC8H065C datasheet(1/8 Pages) STMICROELECTRONICS

No de pièce	STPSC8H065C

Description	High forward surge capability

PDF	8 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

1 / 8 page

This is information on a product in full production.

November 2013

DocID024808 Rev 2

1/8

STPSC8H065C

650 V power Schottky silicon carbide diode

Datasheet

- production data

Features

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 High forward surge capability

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimized

capacitive charge at turn-off behavior is

independent of temperature.

Especially suited for use in interleaved or bridge-

less topologies, this dual-diode rectifier will boost

the performance in hard switching conditions. Its

high forward surge capability ensures a good

robustness during transient phases.

A1

K

A2

A1

A2

K

TO-220AB

STPSC8H065CT

Table 1. Device summary

Symbol

Value

IF(AV)

2 x 4 A

VRRM

650 V

Tj (max)

175 °C

www.st.com

Numéro de pièce similaire - STPSC8H065C

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STPSC8H065	228Kb / 14P	650 V power Schottky silicon carbide diode 07-Jan-2014
	STPSC8H065	364Kb / 16P	650 V, 8 A high surge silicon carbide power Schottky diode 09-Jan-2020
	STPSC8H065-Y	611Kb / 12P	Automotive 650 V, 8 A high surge silicon carbide power Schottky diode 08-Oct-2025
	STPSC8H065B-TR	364Kb / 16P	650 V, 8 A high surge silicon carbide power Schottky diode 09-Jan-2020
	STPSC8H065BY-TR	611Kb / 12P	Automotive 650 V, 8 A high surge silicon carbide power Schottky diode 08-Oct-2025

More results

Description similaire - STPSC8H065C

Fabricant	No de pièce	Fiches technique	Description
Shenzhen Ping Sheng Ele...	KBL005	257Kb / 2P	High forward surge current capability
	KBPC1505WN	212Kb / 2P	High forward surge current capability
	KBPC15005N	220Kb / 2P	High forward surge current capability
DIOTEC Electronics Corp...	UF4001	660Kb / 2P	High forward surge current capability
Sangdest Microelectroni...	S1A-F	114Kb / 5P	High forward surge capability
DIYI Electronic Technol...	SL2045	2Mb / 2P	High Forward Surge Capability
Vishay Siliconix	VSB2045-M3	87Kb / 5P	High forward surge capability 22-Nov-13
STMicroelectronics	STPSC12C065-Y	178Kb / 8P	High forward surge capability 13-Jan-2015
Shanghai Leiditech Elec...	MUR16120DC	437Kb / 3P	High forward surge capability
Shanghai Leiditech Elec...	SS15U60	218Kb / 3P	High forward surge capability

More results

STPSC8H065C Fiches technique(PDF) 1 Page - STMicroelectronics

STPSC8H065C Fiches technique(HTML) 1 Page - STMicroelectronics

Numéro de pièce similaire - STPSC8H065C

Description similaire - STPSC8H065C

Html Pages

1 2 3 4 5 6 7 8

Fiches technique Télécharger

Lien URL