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STP160N3LL Fiches technique(PDF) 3 Page - STMicroelectronics |
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STP160N3LL Fiches technique(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() STP160N3LL Electrical ratings DocID025073 Rev 3 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V ID (1) Drain current (continuous) at Tcase = 25 °C 120 A ID Drain current (continuous) at Tcase = 100 °C 112 IDM (2) Drain current (pulsed) 480 PTOT Total dissipation at Tcase = 25 °C 136 W EAS (3) Single pulse avalanche energy 150 mJ Tstg Storage temperature –55 to 175 °C Tj Operating junction temperature Notes: (1) Current is limited by package. (2) Pulse width is limited by safe operating area. (3) starting Tj = 25 °C, ID = 40 A Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.1 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 |
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