STL60P4LLF6 datasheet(4/14 Pages) STMICROELECTRONICS

No de pièce	STL60P4LLF6

Description	P-channel 40 V, 0.0115 Ω typ.,60 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package

PDF	14 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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4 / 14 page

Electrical characteristics

STL60P4LLF6

4/14

DocID026840 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0,

ID = 250 µA

IDSS

Zero gate voltage drain

current

VGS = 0,

VDS = 40 V

µA

VGS = 0,

VDS = 40 V,

TC = 125 °C

µA

IGSS

Gate-body leakage

current

VDS = 0,

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS,

ID = 250 µA

RDS(on)

Static drain source

on-resistance

VGS = 10 V,

ID = 6.5 A

0.0115

0.014

VGS = 4.5 V,

ID = 6.5 A

0.015

0.019

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

CISS

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

3525

COSS

Output capacitance

344

Crss

Reverse transfer

capacitance

238

Total gate charge

V DD= 20 V, ID = 13 A,

VGS = 4.5 V

Qgs

Gate-source charge

11.3

Qgd

Gate-drain charge

13.8

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 6.5 A,

RG = 4.7 Ω, VGS = 10 V

49.4

Rise time

60.6

td(off)

Turn-off delay time

170

Fall time

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