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STL42PLLF6 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STL42PLLF6 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() November 2016 DocID025457 Rev 4 1/16 This is information on a product in full production. www.st.com STL42P6LLF6 P-channel - 60 V, 23 mΩ typ., -42 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STL42P6LLF6 -60 V 26 mΩ -42 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STL42P6LLF6 42P6LLF6 PowerFLAT™ 5x6 Tape and reel |
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