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STGY80H65DFB Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STGY80H65DFB
Description  Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
PDF  22 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGY80H65DFB Fiches technique(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
May 2015
DocID024366 Rev 6
1/22
STGY80H65DFB, STGW80H65DFB,
STGWA80H65DFB STGWT80H65DFB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 80 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
TO-247 long leads
1
2
3
TO-3P
1
2
3
TAB
1
2
3
Max247
TO-247
C (2 or TAB)
E (3)
G (1)
Table 1. Device summary
Order code
Marking
Package
Packing
STGY80H65DFB
GY80H65DFB
Max247
Tube
STGW80H65DFB
GW80H65DFB
TO-247
Tube
STGWA80H65DFB
GW80H65DFB
TO-247 long leads
Tube
STGWT80H65DFB
GWT80H65DFB
TO-3P
Tube
www.st.com


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