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STGP30H65F Fiches technique(PDF) 7 Page - STMicroelectronics

No de pièce STGP30H65F
Description  Low thermal resistance
PDF  13 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30H65F Fiches technique(HTML) 7 Page - STMicroelectronics

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STGP30H65F
Electrical characteristics
Figure 8. VCE(sat) vs. junction temperature
Figure 9. VCE(sat) vs. collector current
Figure 10. Forward bias safe operating area
Figure 11. Thermal impedance
Figure 12. Gate charge vs. gate-emitter voltage
Figure 13. Capacitance variations vs. VCE
VCE(sat)
1.8
1.6
1.4
1.2
-50
0
TJ(°C)
100
(V)
50
2.0
2.2
150
2.4
2.6
2.8
3.0
IC=15A
IC=30A
IC=60A
AM17366v1
VGE=15V
VCE(sat)
1.8
1.6
1.4
1.2
10
20
IC(A)
40
(V)
30
2.0
2.2
50
2.4
2.6
2.8
3.0
TJ=-40°C
VGE=15V
TJ=25°C
TJ=175°C
3.2
1.
AM17367v1
IC
100
10
1
1
100
VCE(V)
10
(A)
(single pulse TC=25°C,
TJ<175°C, VGE=15V)
1µs
100µs
1ms
AM17370v1
10
-5
10
-4
10
-3
10
-2
10
-1
tp(s)
10
-2
10
-1
K
δ0
δ0.01
δ0.02
δ0.05
δ0.1
δ0.2
δ0.5
Zth=k Rthj-c
δ=tp/t
tp
t
ZthTO2T_B
VGE
8
6
4
2
0
Qg(nC)
100
(V)
50
10
VCC= 400V, IC=30A
12
14
16
0
AM17372v1
C
1000
100
0.1
VCE(V)
10
(pF)
1
10
Cies
Coes
Cres
AM17373v1



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