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STGP20V60DF Fiches technique(PDF) 7 Page - STMicroelectronics |
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STGP20V60DF Fiches technique(HTML) 7 Page - STMicroelectronics |
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7 / 23 page ![]() DocID024360 Rev 3 7/23 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area Figure 10. Transfer characteristics Figure 11. Diode VF vs. forward current Figure 12. Normalized VGE(th) vs. junction temperature Figure 13. Normalized BVCES vs. junction temperature AM17194v1 0 10 20 30 40 50 60 70 1 10 f (kHz) Ic [A] rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=4.7ohm,Vge=0/15V, Tj=175°C) Tc = 100°C Tc = 80°C AM17179v1 0.01 0.1 1 10 110 100 IC (A) VCE (V) 10 μs 100 μs 1 ms (single pulse T C =25 °C, T J <=175 °C; VGE =15 V) AM17173v1 TJ=175°C 10 20 30 40 50 60 70 78 9 10 11 IC (A) VGE (V) -40°C 25°C AM17178v1 0.8 1.2 1.6 2 2.4 10 15 20 25 30 35 VF (V) IF (A) T =175 °C 25°C -40°C J AM17181v1 0.6 0.7 0.8 0.9 1.0 1.1 -50 0 50 100 150 VGE(th) norm (V) TJ(ºC) V = 5V GE AM17180v1 0.9 1.0 1.1 -50 0 50 100 150 BVces norm (V) TJ(ºC) |
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