MD2009DFP datasheet(3/10 Pages) STMICROELECTRONICS

No de pièce	MD2009DFP

Description	High voltage NPN power transistor for CRT TV

PDF	10 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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MD2009DFP

Electrical characteristics

Doc ID 16108 Rev 1

3/10

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off

current (VBE = 0)

VCE = 1500V

VCE = 1500V, Tc= 125°C

0.2

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5V

120

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

IE = 700mA

VCE(sat)

(1)

Pulse test: pulse duration

≤300 µs, duty cycle ≤2%.

Collector-emitter

saturation voltage

IC = 5.5A ,

IB = 1.4A

2.8

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 5.5A ,

IB = 1.4A

1.3

hFE

(1)

DC current gain

IC = 1A,

VCE = 5V

IC = 5.5A,

VCE = 1V

IC = 5.5A ,

VCE = 5V

4.7

(1)

Diode forward voltage

IF= 5.5 A

1.6

Inductive load

Storage time

Fall time

IC = 5A,,, fh = 16KHz

IB(on) = 1.5A,, VBE(off) = -2.7V

LBB(off) = 6.2µH

4.5

0.3

0.6

µs

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