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STF12N50DM2 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STF12N50DM2 Fiches technique(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() March 2016 DocID026809 Rev 2 1/13 This is information on a product in full production. www.st.com STF12N50DM2 N- channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STF12N50DM2 500 V 0.350 Ω 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STF12N50DM2 12N50DM2 TO-220FP Tube TO-220FP 1 2 3 |
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