STF7N80K5 datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

DocID025377 Rev 1

3/14

STF7N80K5, STFI7N80K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

6(1)

Limited by package

Drain current (continuous) at TC = 100 °C

3.8(1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

24(1)

PTOT

Total dissipation at TC = 25 °C

IAR

Max current during repetitive or single

pulse avalanche

(pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s; TC=25 °C)

2500

dv/dt (3)

ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

Operating junction temperature

-55 to 150

°C

Tstg

Storage temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

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