ACST1235-8FP datasheet(5/13 Pages) STMICROELECTRONICS

5 / 13 page

DocID026033 Rev 1

5/13

ACST1235-8FP

Characteristics

Figure 12. Relative variation of critical rate of

decrease of main current versus junction

temperature (typical values)

Figure 13. Relative variation of static dV/dt

immunity versus junction temperature

100

125

150

Tj(°C)

(dI/dt)

C [Tj]/ (dI/dt)c [Tj=150 °C]

100

125

150

Tj(°C)

dV/dt [T

j ] / dV/dt [T j = 150 °C]

D = VR = 536 V

Device exceeding

dV/dt = 5 kV/μs

Figure 14. Relative variation of leakage current

versus junction temperature for different values

of blocking voltage (typical values)

Figure 15. Relative variation of the maximum

clamping voltage versus junction temperature

(minimum values)

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

100

125

150

DRM=VRRM = 800 V

DRM=VRRM = 600 V

DRM=VRRM = 400 V

IDRM / IRRM[Tj;VDRM / VRRM] / IDRM / IRRM

Tj (°C)

V [T ] / V [T = 25 °C]

0.85

0.90

0.95

1.00

1.05

1.10

-50

-25

100

125

150

Tj(°C)

ACST1235-8FP Fiches technique(PDF) 5 Page - STMicroelectronics

ACST1235-8FP Fiches technique(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Fiches technique Télécharger

Lien URL