ACST1035-8FP datasheet(5/13 Pages) STMICROELECTRONICS

5 / 13 page

ACST1035-8FP

Characteristics

DocID025321 Rev 2

5/13

Figure 8: Non repetitive surge peak on-state

current for a sinusoidal pulse with width tp < 10 ms

Figure 9: Relative variation of gate trigger current

and gate trigger voltage versus junction

temperature (typical values)

Figure 10: Relative variation of holding current and

latching current versus junction temperature

(typical values)

Figure 11: Relative variation of critical rate of

decrease of main current (dI/dt)c versus reapplied

(dV/dt)c

Figure 12: Relative variation of critical rate of

decrease of main current versus junction

temperature (typical values)

Figure 13: Relative variation of static dV/dt

immunity versus junction temperature

(A), I t (A s)

TSM

100

1000

0.01

0.10

1.00

10.00

dI/dt limitation: 100 A/µs

ITSM

t ( ms)

Tj initial = 25 °C

0.1

1.0

10.0

100.0

j = 150 °C

(dV/dt)c (V/µs)

(dl/dt)c[(dV/dt)c] / specified (dl/dt)c

100

125

150

Tj(°C)

(dI/dt )

C [T j ] / (dI/dt )c [T j = 150 °C]

100

125

150

(dV/dt) > 5KV/µs

Tj (°C)

VD = VR = 536 V

dV/dt[Tj] / dV/dt[Tj = 150 °C]

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