STTH112-Y datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

DocID025888 Rev 1

3/7

STTH112-Y

Characteristics

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Forward voltage drop versus forward

current (typical values)

P(W)

F(AV)

0.0

0.4

0.8

1.2

1.6

2.0

2.4

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

δ = 0.05 δ = 0.1 δ = 0.2

δ = 0.5 δ = 1

δ=tp/T

I(A)

F(AV)

I(A)

0.01

0.10

1.00

10.00

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

V(V)

T = 25°C

T = 150°C

Figure 3. Forward voltage drop versus forward

current (maximum values)

Figure 4. Relative variation of thermal

impedance junction to lead versus pulse

duration

I(A)

0.01

0.10

1.00

10.00

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

T = 25°C

T = 150°C

V(V)

Z/R

th(j- )

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

SMBflat

t(s)

Figure 5. Junction capacitance versus reverse

voltage applied (typical values)

Figure 6. Thermal resistance junction to

ambient versus copper surface under each lead

C (pF)

100

1000

10000

V(V)

F = 1 MHz

OSC = 30 mVRMS

j = 25 °C

(°C/W)

th(j-a)

100

125

150

175

200

2345

678

(cm²)

epoxy printed circuit board FR4, copper thickness: 35 µm

STTH112-Y Fiches technique(PDF) 3 Page - STMicroelectronics

STTH112-Y Fiches technique(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

Fiches technique Télécharger

Lien URL