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MP23AB01DH Fiches technique(PDF) 6 Page - STMicroelectronics |
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MP23AB01DH Fiches technique(HTML) 6 Page - STMicroelectronics |
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6 / 12 page ![]() Absolute maximum ratings MP23AB01DH 6/12 DocID030017 Rev 1 3 Absolute maximum ratings Stresses above those listed as “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 5: Absolute maximum ratings Symbol Ratings Maximum value Unit Vdd Supply voltage -0.5 to 4.8 V TSTG Storage temperature range -40 to +105 °C ESD (HBM) ANSI/ESDA/JEDEC JS001 ±2000 V ESD (MM) EIA/JESD22-A115 ±200 V ESD (CDM) JESD22-C101 ±750 V ESD (1) Per IEC61000-4-2, 3 discharges, 150 pF, 330 Ω direct contact to housing. MIC must be at zero potential before each discharge. ±8000 V Notes: (1)Bypass capacitor 200 nF or 1 µF (better), is definitely recommended for ESD main clamp integrity. |
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