TSDF1920W datasheet(1/4 Pages) VISHAY

No de pièce	TSDF1920W

Description	25 GHz Silicon NPN Planar RF Transistor

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Fabricant	VISHAY [Vishay Siliconix]

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TSDF1920W

Vishay Semiconductors

1 (4)

www.vishay.com

Document Number 85092

Rev. 2, 02–May–02

25 GHz Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For RF front–ends, low noise, and wideband

applications, such as in analogue and digital cellular

and cordless phones (DECT, PHD), in TV systems

(e.g. satellite tuners), in high frequency oscillators up

to 12 GHz, in pagers and radar detectors.

Features

D Very low noise figure

D Very high power gain

D High transition frequency fT = 24 GHz

D Low feedback capacitance

D Emitter pins are thermal leads

12

43

16712

TSDF1920W Marking: YH3

Plastic case (SOT 343R)

1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector

Absolute Maximum Ratings

Tamb = 25°C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

VCBO

10

V

Collector-emitter voltage

VCEO

3.5

V

Emitter-base voltage

VEBO

1.5

V

Collector current

IC

40

mA

Total power dissipation

Tamb 60 °C

Ptot

200

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

–65 to +150

°C

Junction ambient

on glass fibre printed board

(25 x 20 x 1.5) mm3 plated with 35

µm Cu

RthJA

450

K/W

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