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8AF Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce 8AF
Description  Pressfit Rectifier Diodes, 50 A
PDF  7 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

8AF Fiches technique(HTML) 2 Page - Vishay Siliconix

  8AF Datasheet HTML 1Page - Vishay Siliconix 8AF Datasheet HTML 2Page - Vishay Siliconix 8AF Datasheet HTML 3Page - Vishay Siliconix 8AF Datasheet HTML 4Page - Vishay Siliconix 8AF Datasheet HTML 5Page - Vishay Siliconix 8AF Datasheet HTML 6Page - Vishay Siliconix 8AF Datasheet HTML 7Page - Vishay Siliconix  
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93530
2
Revision: 17-Jun-08
8AF Series
Vishay Semiconductors
Pressfit Rectifier Diodes, 50 A
Note
(1) Mounting: A 12.6 ± 0.02 mm (0.496 to 0.497") diameter hole should be drilled in heatsink, the leading edge chamfered to 0.038 mm
(0.015") x 45°. The autodiode should then be press fitted, ensuring that the sides of the autodiode are kept parallel to the sides of the hole.
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
50
A
150
°C
Maximum RMS forward current
IF(RMS)
79
A
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ =
TJ maximum
714
A
t = 8.3 ms
747
t = 10 ms
100 % VRRM
reapplied
600
t = 8.3 ms
628
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
2546
A2s
t = 8.3 ms
2324
t = 10 ms
100 % VRRM
reapplied
1800
t = 8.3 ms
1643
Maximum I2
t for fusing
I2
t
t = 0.1 to 10 ms, no voltage reapplied
25 455
A2
s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
 x I
F(AV) < I <  x IF(AV)), TJ = TJ maximum
0.60
V
High level value of threshold voltage
VF(TO)2
(
 x I
F(AV) < I < 20 x  x IF(AV)), TJ = TJ maximum
0.68
Low level value of forward slope resistance
rf1
(16.7 % x
 x I
F(AV) < I <  x IF(AV)), TJ = TJ maximum
6.66
m
High level value of forward slope resistance
rf2
(
 x I
F(AV) < I < 20 x  x IF(AV)), TJ = TJ maximum
6.25
Maximum forward voltage drop
VFM
TJ = 25 °C, IFM =  x rated IF(AV)
1.45
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
and storage temperature range
TJ, TStg
- 65 to 195
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.60
K/W
Typical thermal resistance,
case to heatsink
RthCS
As per mounting details, see note (1)
0.50
Approximate weight
10
g
0.36
oz.
Case style
See dimensions - link at the end of datasheet
B-47



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