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US3JB Fiches technique(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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US3JB Fiches technique(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page ![]() Production specification Surface Mount Rectifiers US3AB--US3MB Document Number : SMB307AA www.gmicroelec.com 1 FEATURES For surface mount applications Low profile package Easy pick and place Ultrafast recovery times for high efficiency Low forward voltage,low power loss Built-in strain relief,ideal for automated placement High temperature soldering:250℃/10 seconds on terminals Plastic package has underwriters laboratories flammability classification 94V-0 MECHANICAL DATA Case: JEDEC DO-214AA,molded plastic body over passivated chip Terminals: Solder Plated, solderable per MIL-STD-750,Method 2026 Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol US3AB US3BB US3DB US3GB US3JB US3KB US3MB UNITS Marking code US3AB US3BB US3DB US3GB US3JB US3KB US3MB Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRWS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL=110℃ IF(AV) 3.0 A Peak forward surge current 8.3ms single half sine-wave super imposed on rated load (JEDEC Method) IFSM 100 A Thermal Characteristics Characteristic Symbol US3AB US3BB US3DB US3GB US3JB US3KB US3MB UNITS Typical junction capacitance at 4.0V,1MHZ CJ 70 50 p F Maximum thermal resistance (NOTE1) RθJA 25 ℃ /W Operating temperature range TJ -55----+150 ℃ Storage temperature range TSTG -55----+150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbo l US3AB US3BB US3DB US3GB US3JB US3KB US3MB UNITS Maximum instantaneous forward voltage at 3.0A VF 1.0 1.25 1.7 V Maximum DC reverse current @TA=25℃ at rated DC blocking voltage @TA=125℃ IR 10.0 500 μ A Maximum reverse recovery time at IF=0.5A IR=1.0A Irr=0.25A trr 50 75 ns NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm) copper pad area Pb Lead-free |
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