MBR3045ST datasheet(2/5 Pages) ONSEMI

2 / 5 page

MBR3045ST, MBRB3045CT−1

http://onsemi.com

THERMAL CHARACTERISTICS (Per Diode)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

RθJC

1.5

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode)

Characteristic

Symbol

Value

Unit

Instantaneous Forward Voltage (Note 2)

(iF = 15 Amp, TC = 25°C)

(iF = 15 Amp, TC = 125°C)

(iF = 30 Amp, TC = 25°C)

(iF = 30 Amp, TC = 125°C)

0.62

0.57

0.76

0.72

Instantaneous Reverse Current (Note 2)

(VR = 45 Volts, TC = 25°C)

(VR = 45 Volts, TC = 125°C)

0.2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Pulse Test: Pulse Width = 300

μs, Duty Cycle ≤ 2.0%

Figure 1. Typical Forward Voltage

Figure 2. Maximum Reverse Current

0.6

vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1000

VR, REVERSE VOLTAGE (VOLTS)

0.2

0.04

0.02

0.002

1.0

0.2

0.4

0.8

0.1

0.4

1.0

0.1

1.0

4.0

2.0

100

200

TJ = 125°C

150

°C

TJ = 150°C

125

°C

100

°C

100

0.01

0.004

°C

1.6

1.2

1.4

1.8

Figure 3. Typical Reverse Current

0.6

vF, MAXIMUM FORWARD VOLTAGE (VOLTS)

1000

1.0

0.2

0.4

0.8

0.1

1.0

TJ = 125°C

150

°C

100

1.6

1.2

1.4

1.8

MBR3045ST Fiches technique(PDF) 2 Page - ON Semiconductor

MBR3045ST Fiches technique(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5

Fiches technique Télécharger

Lien URL