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4AM11 Fiches technique(PDF) 1 Page - Hitachi Semiconductor

No de pièce 4AM11
Description  Silicon N-Channel/P-Channel Power MOS FET Array
PDF  10 Pages
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Fabricant  HITACHI [Hitachi Semiconductor]
Site Internet  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

4AM11 Fiches technique(HTML) 1 Page - Hitachi Semiconductor

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4AM11
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
•
Low on-resistance
N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A
P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A
•
Capable of 4 V gate drive
•
Low drive current
•
High speed switching
•
High density mounting
•
Suitable for H-bridged motor driver


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