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U3810BM Fiches technique(PDF) 10 Page - TEMIC Semiconductors |
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U3810BM Fiches technique(HTML) 10 Page - TEMIC Semiconductors |
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10 / 31 page ![]() TELEFUNKEN Semiconductors U3810BM Rev. A1: 19.01.1996 10 (31) Absolute maximum ratings Parameters Symbol Value Unit DC calling voltage (pin 2) VRI 35 V DC calling current (pin 2) IR 30 mA Conversation line voltage (pin 10) VL 15 17 V V pulse 20 ms Conversation line current IL 150 mA Total power dissipation *) Ptot 1 W Operating temperature range Tamb – 25 to + 55 °C Storage temperature range Tstg – 55 to + 150 °C Junction temperature Tj 125 °C Thermal resistance Parameters Symbol Value Unit Junction ambient *) RthJA 70 K/W Electrical characteristics IL = 28 mA, Tamb = 25°C, f = 1 kHz, RDC = 20 kΩ, all internal registers cleared, unless otherwise specified C1 L1 R1 C0 94 7894 e Figure 5 D 455 kHz ceramic resonator: MURATA or equivalent D Refer to the tests circuits Resonance factor Qm = 3100, L1 = 6.1 mH, C1 = 21 pF, CO = 268.5 pF, R1 = 5.5 W (Schematic above) All resistances are specified at 1%, all capacitances at 2%. Parameters Test conditions Min. Typ. Max. Unit Fig. Line voltage IL = 15 mA IL = 28 mA IL = 60 mA 4.2 6.7 12.8 4.75 7.2 13.45 5.2 7.5 14.1 V 6 VDD, VCC stabilized power supply IL = 8 mA, –Idd (ICC) = 0.6 mA IL = 28 mA, –Idd (ICC) = 2.3 mA 2.5 3.2 2.65 3.45 3.6 V 6 IDD at VDD = 3.5 V Internal operating supply current S4 on 3 180 210 mA 9 Leakage current 100 nA Speed up off threshold VSOFF Speed up on line– current ISON See fig. 11 ILmax = 80 mA VL = 4 V See fig. 14 IL decreasing VDD = 2.8 V 2.45 5.0 2.65 5.9 2.8 7.5 V mA 7 Speed up current VL = 4 V 40 70 mA 7 *) Note: Assembly on PC board w 24 cm2 assumed |
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