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TIP32CG Fiches technique(PDF) 2 Page - ON Semiconductor |
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TIP32CG Fiches technique(HTML) 2 Page - ON Semiconductor |
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2 / 7 page ![]() TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP31G, TIP32G TIP31AG, TIP32AG TIP31BG, TIP32BG TIP31CG, TIP32CG VCEO(sus) 40 60 80 100 − − − − Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31G, TIP32G, TIP31AG, TIP32AG (VCE = 60 Vdc, IB = 0) TIP31BG, TIP31CG, TIP32BG, TIP32CG ICEO − − 0.3 0.3 mAdc Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP31G, TIP32G (VCE = 60 Vdc, VEB = 0) TIP31AG, TIP32AG (VCE = 80 Vdc, VEB = 0) TIP31BG, TIP32BG (VCE = 100 Vdc, VEB = 0) TIP31CG, TIP32CG ICES − − − − 200 200 200 200 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE 25 10 − 50 − Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) − 1.2 Vdc Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.8 Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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