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BLS3135-65 Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce BLS3135-65
Description  Microwave power transistor
PDF  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLS3135-65 Fiches technique(HTML) 4 Page - NXP Semiconductors

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1999 Aug 16
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-65
Fig.2
Load power as a function of the drive power;
typical values.
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
handbook, halfpage
4
(2)
(3)
PL
(W)
6
PD (W)
812
100
0
80
10
60
40
20
MCD750
(1)
Fig.3
Power gain as a function of load power;
typical values.
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
handbook, halfpage
0
100
10
0
2
4
6
8
20
Gp
(dB)
PL (W)
40
60
80
MCD751
(2)
(3)
(1)
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.4
Collector efficiency as a function of load
power; typical values.
handbook, halfpage
0
100
50
0
10
20
30
40
20
ηC
(%)
PL (W)
40
60
80
MCD752
(2)
(1)
(3)



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