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2SD800 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD800 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD800 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB=750V;IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 100 uA hFE DC Current Gain IC= 1A ; VCE= 5V 15 60 COB Output Capacitance IE= 0;VCB= 10V;ftest= 1.0MHz 85 pF fT Current-Gain —Bandwidth Product IC= 1A ; VCE= 5V 8 MHz Switching times tstg Storage Time IC= 3.5A ,IB1= IB2= 1A, 1.2 μ s tf Fall Time 0.15 μ s |
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