HMIC™ Silicon PIN Diode Switches

with Integrated Bias Network

Rev. V6

MA4SWx10B-1 Series

2

2

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2

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

2 GHz

6 GHz

12 GHz

18 GHz

dB

—

1.5

0.7

0.9

1.2

1.8

1.0

1.2

1.8

Isolation

2 GHz

6 GHz

12 GHz

18 GHz

dB

55

47

40

36

60

50

45

40

—

Input Return Loss

2 GHz

6 GHz

12 GHz

18 GHz

dB

—

14

15

15

13

—

—

ns

—

50

—

MA4SW210B-1 (SPDT)

MA4SW310B-1 (SP3T)

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

2 GHz

6 GHz

12 GHz

18 GHz

dB

—

1.6

0.8

1.0

1.3

2.0

1.1

1.3

1.9

Isolation

2 GHz

6 GHz

12 GHz

18 GHz

dB

54

47

40

36

59

50

45

40

—

Input Return Loss

2 GHz

6 GHz

12 GHz

18 GHz

dB

—

14

15

16

14

—

—

ns

—

50

—

1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the

modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an

state current, is typically 10:1.