UGV3040L-TQ2-R datasheet(2/4 Pages) UTC

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UGV3040

Insulated Gate Bipolar Transistor

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R219-011.G



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Emitter Breakdown Voltage

BVCER

450

Emitter to Collector Voltage Reverse Battery Condition

BVECS

TJ=25°C, ISCIS=14.2A, L=3.0mHy

300

At Starting

TJ= 150°C, ISCIS=10.6A, L=3.0mHy

ESCIS

170

TC=25°C

Continuous Collector Current

TC=110°C

Gate to Emitter Voltage Continuous

VGEM

±10

TO-220/TO-263

125

TO-220F

41.6

Power Dissipation Total at TC=25°C

TO-252

125

TO-220/TO-263

TO-220F

0.332

Power Dissipation Derating TC>25°C

TO-252

W/°C

Electrostatic Discharge Voltage at 100pF, 1500Ω

ESD

Junction Temperature

-40 ~ +175

°C

Storage Temperature Range

TSTG

-40 ~ +175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-252

TO-263

1.0

Junction to Case

TO-220F

θJC

3.0

°C/W

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