UESD4CUSB30G-AF5-R datasheet(1/4 Pages) UTC

No de pièce	UESD4CUSB30G-AF5-R

Description	Flow-Through Pin Mapping

PDF	4 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

Logo

1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UESD4CUSB30

Preliminary

TVS

www.unisonic.com.tw

1 of 4

QW-R223-027.a

4-CHANNEL ESD

PROTECTION FOR

SUPER-SPEED USB 3.0

INTERFACE



DESCRIPTION

The UTC UESD4CUSB30 is 4 channel Transient Voltage

Suppressor (TVS) based Electrostatic Discharge (ESD) protection

diode arrays. The UTC UESD4CUSB30 device is rated to

dissipate ESD strikes at the maximum level specified in the IEC

61000-4-2 international standard (Contact). These devices also

offer 5A (8/20μs) peak pulse current ratings per IEC 61000-4-5

(Surge) specification.



FEATURES

* Supports USB 3.0 Data Rates (5 Gbps)

* Low Capacitance

* IEC 61000-4-2 ESD Protection (Level 4 Contact)

* IEC 61000-4-5 Surge Protection -5A (8/20µs)

* Dynamic Resistance: 0.6Ω (Typ)

* Flow-Through Pin Mapping



ORDERING INFORMATION

Ordering Number

Package

Packing

UESD4CUSB30G-AF5-R

SOT-25

Tape Reel



MARKING

Numéro de pièce similaire - UESD4CUSB30G-AF5-R

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	UESD4C05R	134Kb / 4P	4-CHANNEL ESD SOLUTION FOR HIGH-SPEED DIFFERENTIAL INTERFACE
	UESD4C05RG-AG6-R	134Kb / 4P	4-CHANNEL ESD SOLUTION FOR HIGH-SPEED DIFFERENTIAL INTERFACE
	UESD4C05RL-AG6-R	134Kb / 4P	4-CHANNEL ESD SOLUTION FOR HIGH-SPEED DIFFERENTIAL INTERFACE
	UESD4C5V6C08	175Kb / 4P	LOW CAPACITANCE ESD PROTECTION ARRAY
	UESD4C5V6C08G-AE5-R	175Kb / 4P	LOW CAPACITANCE ESD PROTECTION ARRAY

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Samsung semiconductor	DS_K7M323625M	211Kb / 18P	1Mx36 & 2Mx18 Flow-Through NtRAM
List of Unclassifed Man...	QS3VH2861	65Kb / 8P	2.5V / 3.3V 10-BIT FLOW-THROUGH PIN OUT, HIGH BANDWIDTH SWITCH
Integrated Circuit Solu...	IC61SF25632T	476Kb / 19P	8Mb SyncBurst Flow through SRAM
Integrated Device Techn...	IDTQS3VH16861	81Kb / 8P	3.3V 20-BIT FLOW-THROUGH PIN OUT, HIGH BANDWIDTH BUS SWITCH
Samsung semiconductor	K7M163635B	394Kb / 19P	512Kx36 & 1Mx18 Flow-Through NtRAM
Samsung semiconductor	K7M323635C	391Kb / 19P	1Mx36 & 2Mx18 Flow-Through NtRAM
Honeywell Accelerometer...	26PCBFD2G	238Kb / 3P	Gage Unamplified Compensated Flow-Through
Integrated Device Techn...	IDTQS3VH2861	276Kb / 8P	2.5V / 3.3V 10-BIT FLOW-THROUGH PIN OUT, HIGH BANDWIDTH SWITCH
Integrated Device Techn...	IDTQS3VH16861	283Kb / 8P	3.3V 20-BIT FLOW-THROUGH PIN OUT HIGH BANDWIDTH BUS SWITCH
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UESD4CUSB30G-AF5-R Fiches technique(PDF) 1 Page - Unisonic Technologies

UESD4CUSB30G-AF5-R Fiches technique(HTML) 1 Page - Unisonic Technologies

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