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2SC4703 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SC4703
Description  isc Silicon NPN RF Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC4703 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon NPN RF Transistor
2SC4703
DESCRIPTION
·
Low Distortion at Low Supply Voltage.
IM2- 55 dB TYP., IM3- 76 dB TYP.
@VCE = 5 V, IC = 50 mA, VO = 105dBμ/75Ω
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for low distortion ,low noise RF amplifier operating
with low supply voltage (VCE = 5V).
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
0.15
A
PC
Collector Power Dissipation
@TC=25℃
1.8
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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