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2SA1932 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1932 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1932 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -230 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V VBE(ON) Base-Emitter on Voltage IC= -500mA;VCE=-5V -1.0 V ICBO Collector Cutoff Current VCB= -230V ; IE=0 -1.0 μ A IEBO Emitter Cutoff Current VEB= -7V; IC=0 -1.0 μ A hFE DC Current Gain IC= -100mA; VCE= -5V 100 320 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 30 pF fT Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 70 MHz |
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