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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7380 Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7380 Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7380 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 61 73 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 4.3 ––– ––– S Qg Total Gate Charge ––– 15 23 Qgs Gate-to-Source Charge ––– 2.9 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 4.5 ––– td(on) Turn-On Delay Time ––– 9.0 ––– tr Rise Time ––– 10 ––– td(off) Turn-Off Delay Time ––– 41 ––– ns tf Fall Time ––– 17 ––– Ciss Input Capacitance ––– 660 ––– Coss Output Capacitance ––– 110 ––– Crss Reverse Transfer Capacitance ––– 15 ––– pF Coss Output Capacitance ––– 710 ––– Coss Output Capacitance ––– 72 ––– Coss eff. Effective Output Capacitance ––– 140 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 3.6 A (Body Diode) ISM Pulsed Source Current ––– ––– 29 A (Body Diode) VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 50 ––– ns Qrr Reverse Recovery Charge ––– 110 ––– nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typ. ––– ––– Conditions VDS = 25V, ID = 2.2A ID = 2.2A VDS = 40V Conditions VGS = 10V VGS = 0V VDS = 25V ƒ = 1.0MHz 75 2.2 MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V TJ = 25°C, IF = 2.2A, VDD = 40V di/dt = 100A/µs Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 2.2A VDS = VGS, ID = 250µA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Max. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 64V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 64V VGS = 10V VDD = 40V ID = 2.2A RG = 24 Ω |
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