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2SD1031 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1031 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1031 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA; IE= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA 2.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 2.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE1 DC Current Gain IC= 1A; VCE= 2.2V 500 hFE 2 DC Current Gain IC= 4A; VCE= 2.2V 1000 20000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 100 pF fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= 10V; ftest= 10MHz 40 MHz |
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