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STM32F334x8 Fiches technique(PDF) 99 Page - STMicroelectronics |
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STM32F334x8 Fiches technique(HTML) 99 Page - STMicroelectronics |
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99 / 115 page ![]() DocID025409 Rev 5 99/115 STM32F334x4 STM32F334x6 STM32F334x8 Electrical characteristics 100 Figure 32. OPAMP Voltage Noise versus Frequency en Voltage noise density @ 1KHz, Output loaded with 4 K Ω - 109 - @ 10KHz, Output loaded with 4 K Ω -43 - 1. Guaranteed by design, not tested in production. 2. The saturation voltage can also be limited by the Iload. 3. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 4. Mostly TTa I/O leakage, when used in analog mode. Table 71. Operational amplifier characteristics(1) (continued) Symbol Parameter Condition Min. Typ. Max. Unit nV Hz ----------- |
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